Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits

We present results on a novel punch-through diode structure that provides good clamping characteristics for both positive and negative polarity. Its performance as off-chip ESD protection device is compared to that of a conventional Zener diode with a comparable capacitance; showing that a punch-through diode features better clamping characteristics and higher current handling at a given reverse stand-off voltage.