Title of article
Sol–gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers
Author/Authors
Seung-Young Bae، نويسنده , , Hyun-Seok Choi، نويسنده , , Se-Young Choi، نويسنده , , Young-Jei Oh، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
2
From page
213
To page
214
Abstract
High quality epitaxial thin films of t-ZrO2, were fabricated on Si(100) wafers via sol–gel processing. The thin films exhibited high epitaxial quality (FWHM∼0.3°) and excellent surface morphology (rms roughness∼14 Å); thus, they are expected to be very useful as epitaxial buffer layers.
Keywords
Sol–gel , epitaxial growth , ZrO2 thin films
Journal title
Ceramics International
Serial Year
2000
Journal title
Ceramics International
Record number
1268154
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