Effect of CuO or/and V2O5 oxide additives on Bi2O3–ZnO–Ta2O5 based ceramics

Pure Bi2Zn2/3Ta4/3O7 (β-BZT) ceramics should be densified above 1000 °C. The sinter ability was improved with the addition of CuO or/and V2O5 (express as CuO/V2O5) into β-BZT ceramics. The sintering temperature of CuO/V2O5 doped β-BZT ceramics was reduced down to 930 °C. The structure of β-BZT doped with CuO was still monoclinic zirconolite structure. The structure of V2O5 doped β-BZT was changed. Fluorite phase appeared when doping amount was above 0.3 wt.%. The Qf values of β-BZT doped with CuO were higher than that of V2O5 doped specimens. By adding 0.05 wt.% CuO together with 0.05 wt.% V2O5 into β-BZT ceramics, microwave dielectric properties were ε=∼63 and Qf=∼6787 at ∼5.35 GHz with αε=∼73 ppm/°C at 1 MHz at a sintering temperature of 930 °C which retained a relative high microwave dielectric properties compared with the undoped β-BZT sintered at 1030 °C.