Structural and dielectric properties of Ba0.85Sr0.15(Zr0.18Ti0.85)O3 thin films grown by a sol–gel process

The Ba0.85Sr0.15Zr0.18Ti0.82O3 (BSZT) thin films were deposited via sol–gel process on LaNiO3-coated silicon substrates. The grain size decreased and the microstructure became dense when substitute Zr for Ti. Dielectric properties were investigated as a function of temperature, frequency and direct current electric field. The temperature dependent dielectric measurements revealed that the thin films have diffuse phase transition characteristics. The tunability of Ba0.8Sr0.2Sn0.10Ti0.90O3 thin films is about 57%, at an applied field of 415 kV/cm and measurement frequency of 1 MHz. It was observed that the leakage current density of Ba0.85Sr0.15Zr0.18Ti0.82O3 is higher than that of BZT thin films.