The ferroelectric and antiferroelectric behavior of PbTiO3/PbZrO3-multilayered thin films

PbZrO3/PbTiO3-multilayered thin films have been fabricated on Pt/Ti/SiO2/Si wafers using a sol–gel process. The multilayered thin film shows typical XRD patterns with a polycrystalline perovskite structure. The electric field-induced antiferroelectric-to-ferroelectric phase transformation behavior was examined by the polarization versus electrical field (P–E) and the capacitance versus voltage (C–V) measurements, both carried out at room temperature. Dielectric properties were measured as a function of temperature and frequency. The antiferroelectric layer was expected to reduce the degradation of polarization, and the ferroelectric layer was expected to maintain the remnant polarization in the multilayered thin film structure.