A new structure of SOI MOSFET for reducing self-heating effect

We use the MEDICI (a two-dimensional, 2D, device simulator) to examine the 2D distribution of potential and carrier concentrations as well as current vectors in a device in order to predict its electrical characteristics for any bias condition. In this work, we investigated the high-temperature operation of SOI MOSFETs with SiO2/Si3N4/SiO2 buried insulators (we call it Multi-layered insulator structure), rather than the conventional silicon-dioxide (SiO2). Since the thermal conductivity of this Multi-layered insulator is much higher than that of SiO2, this new kind of silicon-on-insulator (SOI) structure will greatly reduce the often-severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations in conjunction with conventional drift and diffusion equations. Also, we compare the performance of Multi-layer-based SOI with that of SiO2-based SOI. We find that Multi-layered SOI does indeed remove the self-heating penalty of SOI.