Preparation of BaTiO3 thin films by mist plasma evaporation on MgO buffer layer

Mist plasma evaporation (MPE) was developed to deposit BaTiO3 (BTO) thin films on silicon substrate with MgO buffer layer using metal nitrate aqueous solution as precursor. In MPE, the precursor was ultrasonically atomized into fine droplets, and was transported to radio frequency inductively coupled plasma generated at atmospheric pressure to deposit thin film on substrate. The structure, morphology, and electrical properties of the BaTiO3 films were studied. The BaTiO3 thin films were perovskite, and showed (1 1 1)-preferential orientation on MgO(1 1 1)/Si(1 1 1) substrate. The grain size of the film decreased with the decreasing of substrate temperature. The dielectric constant of the BaTiO3 film at 10 kHz was 566.