Mean dopant ion radius dependency of electrical resistivity in the Zn1−x−yGaxInyO system

The electrical resistivity of the Zn1−x−yGaxInyO system was investigated as a function of the dopant content and mean dopant ion radius. The electrical resistivity of all members of the system exhibited metallic behavior as a function of temperature. The lowest electrical resistivity at 873 K fell to 2.81 × 10−3 (Ω cm) in Zn0.99Ga0.0073In0.0027O. In cases with the same dopant content, the resistivity strongly depended on the mean dopant ion radius, but the Seebeck coefficient was unrelated to those radii. Regardless of dopant content, the minimum resistivity of this system appeared around a mean dopant ion radius of 0.54 Å. Evidently, the carrier mobility is strongly dependent on the magnitude of the mean dopant ion radius and any structural distortion.