Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films

Dependence of the electrical and optical properties of In2O3–10 wt% ZnO (IZO) thin films deposited on glass substrates by RF magnetron sputtering on the annealing atmosphere was investigated. The electrical resistivities of indium zinc oxide (IZO) thin films deposited on glass substrate can be effectively decreased by annealing in an N2 + 10% H2 atmosphere. Higher temperature (200 °C) annealing is more effective in decreasing the electrical resistivity than lower temperature (100 °C) annealing. The lowest resistivity of 6.2 × 10−4 Ω cm was obtained by annealing at 200 °C in an N2 + 10% H2 atmosphere. In contrast, the resistivity was increased by annealing in an oxygen atmosphere. The transmittance of IZO films is improved by annealing regardless of the annealing temperature.