Title of article
Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization
Author/Authors
Lihong Cheng، نويسنده , , Liao-Ying Zheng، نويسنده , , Lei Meng، نويسنده , , Guorong Li، نويسنده , , Yan Gu، نويسنده , , Fu-Ping Zhang، نويسنده , , Ruiqing Chu، نويسنده , , Zhijun Xu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
457
To page
461
Abstract
Al2O3-doped ZnO varistors with high performance have been fabricated with nano composite powders, which were prepared by the sol–gel method. The xerogels, calcined powders and sintered material ceramics were fully characterized. The electrical properties and grain boundary characteristics were measured. The average grain size decreased from 4.4 μm to 3.0 μm and the breakdown voltage increased from 720 V/cm to 1160 V/cm as the amount of Al2O3 increased from 0.0 wt.% to 0.40 wt.%. 2 ms square-wave test indicates that the energy capability was better in a sol–gel derived ZnO varistor than a conventional sample and was enhanced by Al2O3 doping. Improved electrical properties of sol–gel derived ZnO varistors is attributed to the smaller grain size and more uniform distribution of additives. Al2O3-doped ZnO varistor obtained from sol–gel process is useful for device miniaturization.
Keywords
A. Sol–gel process , B. Grain boundaries , E. Varistors , D. ZnO
Journal title
Ceramics International
Serial Year
2012
Journal title
Ceramics International
Record number
1273758
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