• Title of article

    The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition

  • Author/Authors

    Haridas Kumarakuru، نويسنده , , David Cherns، نويسنده , , Andrew M. Collins، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    7
  • From page
    8389
  • To page
    8395
  • Abstract
    The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450 °C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350 °C. The reasons for this are discussed.
  • Keywords
    Scanning electron microscopy (SEM) , Al-doped ZnO (AZO) and ZnO thin films , Pulsed laser deposition (PLD) , Transmission electron microscopy (TEM) , Tunnelling atomic force microscopy (TUNA)
  • Journal title
    Ceramics International
  • Serial Year
    2014
  • Journal title
    Ceramics International
  • Record number

    1276573