Title of article
The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition
Author/Authors
Haridas Kumarakuru، نويسنده , , David Cherns، نويسنده , , Andrew M. Collins، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
7
From page
8389
To page
8395
Abstract
The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450 °C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350 °C. The reasons for this are discussed.
Keywords
Scanning electron microscopy (SEM) , Al-doped ZnO (AZO) and ZnO thin films , Pulsed laser deposition (PLD) , Transmission electron microscopy (TEM) , Tunnelling atomic force microscopy (TUNA)
Journal title
Ceramics International
Serial Year
2014
Journal title
Ceramics International
Record number
1276573
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