Optical band gap modulation by Mg-doping in In2O3(ZnO)3 ceramics

In this study, different amounts of Mg were doped in In2O3(Zn1−xMgxO)3 and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein–Moss effect.