Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics

In this study, the B2O3 doped Ba(Ti0.9Sn0.1)O3 ceramics were prepared by using a solid state reaction method. Wide ranges of frequency (0.1 Hz to 1 MHz) and temperature (20–280 °C) dependence of the impedance relaxation were investigated. The impedance study indicates the presence of both dielectric relaxation in bulk and grain boundary effects in the material. The relaxation times for grain and grain boundary estimated from Cole–Cole plots varied with temperature according to the Arrhenius relation. The activation energy for grain and grain boundary were estimated to be 0.73 and 0.85 eV, respectively.