Dislocation multiplication inside contact holes

Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes with high aspect ratio, which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3(mo)m after backend processings. Those dislocations were identified to be Schockley partial dislocations and stair rod dislocations lying on 4 sets of inclined {lll}Si planes.