An insulated gate bipolar transistor employing the plugged n ^ anode

A vertical Insulated Gate Bipolar Transistor, entitled CB-IGBT(Carrier-inducing Barrier-controlled IGBT) has been proposed and verified by a two-dimensional numerical simulation. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the anode structure in which the p-barrier region and n^+ anode region are employed. In the CB-IGBT, the potential barrier height at the junction between the pbarrier region and n-drift region is controlled by the amount of carriers, so that the trade-off relation between the on-state voltage drop and the switching speed is decoupled efficiently. The switching speed of CB-IGBT is so much enhanced with a negligible increase of the on-state voltage drop, since electrons stored in the n-drift region can be extracted rapidly into the n^+ anode via p-barrier region during turn-off process.