Title of article
Investigation of MOSFET operation in bipolar mode
Author/Authors
Pershenkov، V.S. نويسنده , , Belyakov، V.V. نويسنده , , Cherepko، S.V. نويسنده , , Shvetzov-Shilovsky، I.N. نويسنده , , Abrarnov، V.V. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-132
From page
133
To page
0
Abstract
The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si-SiOz interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Dynamic thermal modeling of IC packages , Measuring of thermal coupling in ICs , Thermal benchmark IC
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
12853
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