Electric breakdowns and breakdown mechanisms in ultrathin silicon oxides

It was found that the breakdown times measured using time-dependent-dielectric-breakdown (TDDB) distributions could be shifted to shorter times when the amount of energy available during the breakdown event was increased. The TDDB distributions were non-unique and breakdown models must account for both electrical breakdowns and dielectric breakdown. A novel approach for obtaining breakdown distributions will be presented. This approach uses a small number of oxides to obtain a time-dependent-electric-breakdown (TDEB) distribution, which will be shown to provide complementary information to that obtained from (TDDB) distributions. While the observation of dielectric breakdown in ultra-thin dielectrics may be difficult using standard test conditions, it will be shown that electric breakdowns are relatively easy to observe.