Analysis of space and energy distribution of stress-induced oxide traps

A new experimental method for the determination of the energy distribution of neutral traps in oxide is presented, based on an analysis of the transient SILC current. Results show that the stress damage is mostly located from about 2 to 2.7 eV from the oxide conduction band, and that a greater stress is generated at the anode side of the stress. Preliminary results of a detailed numerical model for the trap-assisted tunneling are presented, showing that an exponentially decaying trap profile within the oxide is needed to account for the discharge current transient.