Title of article
EXAFS and electrical studies of new narrow-gap semiconductors: InTe1−xSex and In1−xGaxTe Original Research Article
Author/Authors
A.I. Lebedev، نويسنده , , A.V. Michurin، نويسنده , , I.A. Sluchinskaya، نويسنده , , V.N. Demin، نويسنده , , I.H. Munro، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
2007
To page
2012
Abstract
The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In1−xGaxTe and InTe1−xSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.
Keywords
A. Semiconductors , C. EXAFS , D. Electrical properties , C. X-ray diffraction , D. Crystal structure
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2000
Journal title
Journal of Physics and Chemistry of Solids
Record number
1307654
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