Title of article
X-ray determination of charge transfer in solar grade GaAs Original Research Article
Author/Authors
R. Saravanan، نويسنده , , S. Jainulabdeen، نويسنده , , N. Srinivasan، نويسنده , , Y.B. Kannan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
83
To page
86
Abstract
The magnitude and direction of charge transfer in GaAs at various temperatures have been analyzed using our precise and extensive single-crystal X-ray diffraction data. The charge transfer parameters were obtained by employing a quadratic equation method and precise X-ray structure factors collected at 170, 200, 250 and 300 K. A transfer of charge from gallium atom to arsenide atom is evidenced at all the above temperatures.
Keywords
A. Inorganic compounds , C. X-ray diffraction , D. Transport properties , A: Semiconductors
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2008
Journal title
Journal of Physics and Chemistry of Solids
Record number
1309997
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