Title of article
In situ conductivity measurement of matter under extreme conditions by film fabrication on diamond anvil cell Original Research Article
Author/Authors
Chunxiao Gao، نويسنده , , Chunyuan He، نويسنده , , Ming Li، نويسنده , , Yonghao Han، نويسنده , , Yanzhang Ma، نويسنده , , Guangtian Zou، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
2199
To page
2203
Abstract
The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.
Keywords
D. Electrical properties , B. Vapour deposition , A. Thin films , C. High pressure
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2008
Journal title
Journal of Physics and Chemistry of Solids
Record number
1310389
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