• Title of article

    Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach Original Research Article

  • Author/Authors

    Zhigang Zhu، نويسنده , , Ramesh C. Deka، نويسنده , , Arunabhiram Chutia، نويسنده , , Riadh Sahnoun، نويسنده , , Hideyuki Tsuboi، نويسنده , , Michihisa Koyama، نويسنده , , Nozomu Hatakeyama، نويسنده , , Akira Endou، نويسنده , , Hiromitsu Takaba، نويسنده , , Carlos A. Del Carpio، نويسنده , , Momoji Kubo ، نويسنده , , Akira Miyamoto ، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    8
  • From page
    1248
  • To page
    1255
  • Abstract
    A theoretical study on Ru-doped rutile SnO2(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO2(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO2(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru5c/SnO2(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO2(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO2 gas-sensing property.
  • Keywords
    A. Oxides , A. Surfaces , C. ab initio calculations , D. Electrochemical properties , A. Semiconductors
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2009
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1310850