Title of article
Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4 Original Research Article
Author/Authors
S. Meenakshi، نويسنده , , V. Vijayakumar، نويسنده , , Maria A. Eifler، نويسنده , , H.D. Hochheimer، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
832
To page
835
Abstract
Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.
Keywords
C. X-ray diffraction , A. Semiconductors , A. Optical materials , C. High pressure
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2010
Journal title
Journal of Physics and Chemistry of Solids
Record number
1311061
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