Title of article
Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
Author/Authors
Russ، Christian نويسنده , , Bock، Karlheinz نويسنده , , Rasras، Mahmoud نويسنده , , Wolf، Ingrid De نويسنده , , Groeseneken، Guido نويسنده , , Maes، Herman E. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1550
From page
1551
To page
0
Abstract
The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed, . 1999 Elsevier Science Ltd. All rights reserved.
Keywords
HBM , ESD , Compact simulation , Protection structure , Gate coupling , Bipolar transistor model , High current characteristic
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13190
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