Title of article
DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs
Author/Authors
Meneghesso، Gaudenzio نويسنده , , Zanoni، Enrico نويسنده , , Massari، Giovanni نويسنده , , Buttari، Dario نويسنده , , Bortoletto، Andrea نويسنده , , Maretto، Massimo نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1758
From page
1759
To page
0
Abstract
The BVDS-ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal effects on breakdown DC measurements is demonstrated. By adopting pulsed measurements, we confirm that on-state breakdown voltage of InP HEMTs decreases by increasing the temperature, while the opposite occurs in GaAs based MESFETs and HEMTs. We show that DC measurements are not suitable for evaluating on-state breakdown of power MESFETs and HEMTs, and we propose pulsed measurements as a viable alternative, 1999 Eisevier Science Ltd. All rights reserved.
Keywords
Saturation , Interconnects , Electromigration
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13221
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