Title of article
Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property
Author/Authors
Gi-Seok Heo، نويسنده , , In-Gi Gim، نويسنده , , Jong Woon Park، نويسنده , , Kwang-Young Kim، نويسنده , , Tae Won Kim، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
2941
To page
2945
Abstract
Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV–vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I–V curves measured on single NW by the metal–semiconductor–metal model based on thermionic field emission theory.
Keywords
Solvothermal , Electrical property , CdS , Nanowires
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2009
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
1334163
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