• Title of article

    Potential existence of post-perovskite nitrides; DFT studies of ThTaN3

  • Author/Authors

    Samir F. Matar، نويسنده , , Gérard Demazeau، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    6
  • From page
    994
  • To page
    999
  • Abstract
    Within density functional theory, the equations of state for cubic perovskite (c-pv) and hypothetic orthorhombic perovskite (o-pv GdFeO3-type) and post-perovskite (ppv) forms of ThTaN3 are obtained. The decreasing volume and stabilizing energy indicate pressure enabled transitions: c-pv →o-pv →ppv. From electronic structure analysis the chemical system is found insulating in the c-pv ground state form with View the MathML source∼1eV band gap and semi-conducting for the ppv due to increased covalence. The chemical bonding properties show that Th and Ta bondings with the 2 N sites are selectively differentiated and reinforced for Ta–N bond within ppv form. This is the consequence of the corner as well as edge sharing octahedra characterizing ppv while pv structures have only corner sharing octahedra. It is the first case of potential post-perovskite nitride.
  • Keywords
    Perovskite , Post-perovskite , Nitrides , Chemical bonding , Semi-conductors , DFT , LDA
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Serial Year
    2010
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Record number

    1334410