• Title of article

    Electronic structure and chemical bonding of α- and β-CeIr2Si2 intermediate valence compounds

  • Author/Authors

    Samir F. Matar، نويسنده , , Rainer P?ttgen، نويسنده , , Bernard Chevalier، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    81
  • To page
    86
  • Abstract
    The dimorphism of the intermediate valence ternary cerium silicide CeIr2Si2 in the ThCr2Si2 (α) and CaBe2Ge2 (β) modifications is addressed in the framework of the density functional theory. The geometry optimization is in good agreement with the experiment and the subsequent establishment of the energy–volume equation of state (EOS) indicates a stabilization of the β-type relative to the α-type concomitant with the trend of the cerium valence, changing to tetravalent in β-CeIr2Si2. This is equally shown from the site projected DOS and from the large increase of the electronic contribution to the specific heat. The chemical bonding indicates the strongest bonding interactions within the Ir–Si substructure in both varieties. Stabilization of β-CeIr2Si2 with almost tetravalent cerium is in good agreement with ThIVIr2Si2 which exclusively crystallizes in the CaBe2Ge2 type. The EOS behavior of different RIr2Si2 (R=Th, Ce, La) is comparatively discussed.
  • Keywords
    Intermetallic compounds , CeIr2Si2 , Equation of state , Electronic structure , Dimorphism
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Serial Year
    2012
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Record number

    1340311