Title of article
On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI
Author/Authors
Vladimir A. Kulbachinskii، نويسنده , , Vladimir G. Kytin، نويسنده , , Alexey A. Kudryashov، نويسنده , , Alexei N. Kuznetsov، نويسنده , , Andrei V. Shevelkov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
7
From page
154
To page
160
Abstract
The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed.
Keywords
Bismuth tellurohalides , Bridgman crystal growth , Band structure , Thermoelectric properties
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2012
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
1343518
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