Title of article
An initial model for the RIED effect
Author/Authors
Hodgson، نويسنده تهران-دانشگاه صنعتي مالك اشتر Hodgson, R,D. , E.R. and Moroٌo، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
880
To page
884
Abstract
A simple model based on electron acceleration in the conduction band giving rise to an increased F+ oxygen vacancy lifetime provides an explanation for several radiation induced electrical degradation (RIED) associated observations in Al2O3. The increased F+ radioluminescence noted during RIED is a direct consequence of the lifetime increase. The model predicts the observed electric field threshold for RIED, and an increase in the field threshold with increasing impurity content. RIED for RF electric fields is also explained. In addition the lifetime increase provides an explanation for the enhanced oxygen vacancy aggregation including colloid and gamma alumina production observed under RIED conditions.
Journal title
Journal of Nuclear Materials
Serial Year
2000
Journal title
Journal of Nuclear Materials
Record number
1347308
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