Title of article
A 0.8 V 191.9 nW DTMOS Current Mirror OTA in 0.18 m CMOS Process
Author/Authors
Khosrojerdi، Iman نويسنده Department of Electrical Engineering, Imam Reza International University, Mashhad, Iran , , Rezvani، Amin نويسنده Department of Electrical Engineering, Imam Reza International University, Mashhad, Iran , , Pourandoost، Reza نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad ,
Issue Information
فصلنامه با شماره پیاپی 7 سال 2013
Pages
4
From page
115
To page
118
Abstract
In this paper a low-noise/low-power CMOS operational transconductance amplifier (OTA) using dynamic threshold voltage MOSFET (DTMOS) technique is presented. The OTA is designed and simulated using 0.18 µm CMOS technology. The performed simulation results show an input-referred noise of 520.2 nV/?Hz at 1 mHz, so reduces it to 115.8 pV/?Hz at 1 Hz, and a power consumption of 191.9 nW under 5 pF loads. The dc open loop gain is 53.13 dB, a phase margin of 50o and a unity gain-bandwidth (UGB) of 572.9 kHz while operating at 0.8 V supply voltage. The proposed OTA is suitable for the low noise and low-power applications such as medical applications.
Journal title
Majlesi Journal of Telecommunication Devices
Serial Year
2013
Journal title
Majlesi Journal of Telecommunication Devices
Record number
1348649
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