Title of article
The effect of grain size and phosphorous-doping of polycrystalline 3C–SiC on infrared reflectance spectra
Author/Authors
van Rooyen، نويسنده , , I.J. and Engelbrecht، نويسنده , , J.A.A. and Henry، نويسنده , , A. and Janzén، نويسنده , , E. and Neethling، نويسنده , , J.H. and van Rooyen، نويسنده , , P.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
6
From page
103
To page
108
Abstract
The effect of P-doping and grain size of polycrystalline 3C–SiC on the infrared reflectance spectra is reported. The relationship between grain size and full width at half maximum (FWHM) suggest that the behavior of the 3C–SiC with the highest phosphorous doping level (of 1.2 × 1019 at. cm−3) is different from those with lower doping levels (<6.6 × 1018 at. cm−3). It is also further demonstrated that the plasma resonance frequency (ωp) is not influenced by the grain size.
Journal title
Journal of Nuclear Materials
Serial Year
2012
Journal title
Journal of Nuclear Materials
Record number
1360017
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