Generation–recombination noise studied in hydrogenated amorphous silicon

We measure generation–recombination noise in hydrogenated amorphous silicon and determine parameters both in thermal and non-thermal equilibrium. We propose a hole bound to a negatively charged Si dangling bond as the intermediate state in the process of thermal creation of holes. We arrive at a hole binding energy of (0.3±0.1) eV and an attempt rate for hole creation of 7×1012 s−1. Under illumination we determine the quasi-Fermi level of the minority carriers. Light-induced degradation is shown to shift the distribution of neutral dangling-bond states deeper into the gap.