Capture efficiency for clustering reaction between charged defects in β-SiC

In order to investigate the formation kinetics of interstitial loops in β-SiC during irradiation, a capture efficiency of a charged point defect to a charged sink was derived taking into account electric interaction between the defects. The derived capture efficiency depends much on effective charges of defects. For defect accumulation in β-SiC under high-energy electron irradiation, the numerical analysis using the rate theory based model with the capture efficiency was performed, and the calculation results indicate that an interstitial loop grows while keeping its charge to be as neutral as possible, leading to the suppression of the growth of interstitial loops. Roughly speaking, the calculated concentration of clustered interstitials with effective charges approaches to the experimental data. It implies that the capture efficiency derived in the present work may play an important role for better reproducing of the experimental result.