Thermal effects in 10 keV Si PKA cascades in 3C–SiC

We present a molecular dynamics study of the influence of temperature on defect generation and evolution in irradiated cubic silicon carbide. We simulated 10 keV displacement cascades, with an emphasis on the quantification of the spatial distribution of defects, at six different temperatures from 0 K to 2000 K under identical primary knock-on atom conditions. By post-processing the simulation results we analyzed the temporal evolution of vacancies, interstitials, and antisite defects, the spatial distribution of vacancies, and the distribution of vacancy cluster sizes. The majority of vacancies were found to be isolated at all temperatures. We found evidence of temperature dependence in C and Si replacements and C Si antisite formation, as well as reduced damage generation behavior due to enhanced defect relaxation at 2000 K.