An improved time domain analysis of the charge pumping current

A new time domain analysis of the charge pumping phenomenon in metal-oxide-semiconductor field-effect transistors is presented. With this theoretical approach we model the traps filling and the charge pumping current with any gate signal waveform and any energy distribution of the interface traps in the semiconductor bandgap. A method is also presented for the determination of the energy levels reached at the end of the non-steady-state emission of electrons and holes. The theoretical charge pumping response of a single trap is also investigated for uniform and non-uniform substrate doping profiles.