A study of thermally stimulated dielectric relaxation currents in Al/Lu2O3/Al thin-film sandwiches

Results of experimental examinations of thermally stimulated dielectric relaxation currents (TSDRC) for lutetium oxide films in metal/insulator/metal (MIM) structures have been presented. Al/Lu2O3/Al thin-film devices (sandwich-type structures) were prepared on silica plates by physical vapour deposition. Lu2O3 films were fabricated by reactive deposition in oxygen with the help of an electron gun. The TSDRC curves measured in the temperature range from 297 K to 500 K were characterized by a single peak connected with trapping centers with the energy depth of 0.81 eV. The influence of the polarization voltage and polarization time on the TSDRC spectra was tested. The charge released during the relaxation process was estimated and analyzed. The TSDRC spectra were analyzed taking into account two Schottky barriers at each M/I electrode. A transition between barrier-processes and volume-processes has been observed.