Title of article
The effect of temperature on photoinduced metastability in avalanche a-Se layers
Author/Authors
Reznik، نويسنده , , A. P. Lui، نويسنده , , B.J.M. and Lyubin، نويسنده , , V. and Klebanov، نويسنده , , M. and Ohkawa، نويسنده , , Y. and Matsubara، نويسنده , , T. and Miyakawa، نويسنده , , K. and Kubota، نويسنده , , M. and Tanioka، نويسنده , , K. and Kawai، نويسنده , , T. and Rowlands، نويسنده , , J.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
1595
To page
1598
Abstract
The effect of temperature on the initiation of light-induced defects in a-Se targets of high-gain avalanche rushing photoconductor (HARP) camera tubes was studied. At room temperature, avalanche a-Se was found to be subject to both reversible and irreversible photodarkening. At 35 °C, the irreversible photodarkening component was completely absent. This result is attributed to the instantaneous annealing of light-induced metastable coordination defects at elevated temperatures. A model for the formation of permanent crystalline areas at low temperatures via transition states associated with light-induced metastable defects is proposed.
Keywords
Amorphous semiconductors , Photoinduced effects , Defects
Journal title
Journal of Non-Crystalline Solids
Serial Year
2006
Journal title
Journal of Non-Crystalline Solids
Record number
1372716
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