Title of article
Silylene R*XSi (R*=SitBu3; X=H, Me, Ph, Hal, R*): Bildung und Reaktionen
Author/Authors
Nils Wiberg، نويسنده , , Wolfgang Niedermayer، نويسنده ,
Issue Information
دوفصلنامه با شماره پیاپی سال 2001
Pages
8
From page
57
To page
64
Abstract
Thermolyses of disupersilylsilanes R*2SiX2 (R*=supersilyl=SitBu3; X=H, Hal or H together with Me, Ph, Br) at about 160°C lead — besides R*X (R*H preferred to R*Br) — to silylenes R*XSi (X=H, Me, Ph, Br), the intermediate existence of which is proven by trapping them with Et3SiH (formation of Et3Si–(R*XSi)–H), with I2 (formation of I–(R*XSi)–I) or with CH2CH–CHCH2 (formation of [1+4] cycloadducts). The rate of R*X elimination increases in direction R*2SiH2
Keywords
Silicon , Silanides , Supersilyl , Silylenes , Disilenes , Cyclosilanes
Journal title
Journal of Organometallic Chemistry
Serial Year
2001
Journal title
Journal of Organometallic Chemistry
Record number
1372783
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