Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

In this study photoelectrical properties of heterojunctions based on transparent oxide semiconductors thin films are outlined. The structures consisted of thin films of TiO2 doped with V and Pd (n-type semiconductor) and TiO2 with Co and Pd (p-type semiconductor) on silicon were examined by means of current–voltage (I–V) measurements and the optical beam induced current (OBIC) method. I–V characteristics displayed a strong non-linear (diode-like) behavior of prepared heterojunctions. The OBIC examinations enable for the comprehensive analysis of photocurrent generated at the microregion of electrically active areas at the interface of fabricated heterojunctions.