Title of article
Effect of UV anneal on plasma CVD low-k film
Author/Authors
Shioya، نويسنده , , Yoshimi and Ohdaira، نويسنده , , Toshiyuki and Suzuki، نويسنده , , Ryoichi and Seino، نويسنده , , Yutaka and Omote، نويسنده , , Kazuhiko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
10
From page
2973
To page
2982
Abstract
Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low-k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant (k value). The thickness measurement method for the UV annealed low-k film is discussed. The effects of UV irradiation on dielectric constant, shrinkage, stress, density, pore size, mechanical strength, and structure are clarified and the mechanism is discussed.
Keywords
Amorphous metalsmetallic glasses , Dielectric propertiesrelaxation , Plasma deposition , electric modulus , Indentationmicroindentation , FTIR measurements , silicates
Journal title
Journal of Non-Crystalline Solids
Serial Year
2008
Journal title
Journal of Non-Crystalline Solids
Record number
1380467
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