Title of article
A simulation model for dielectric relaxation based on defect diffusion model and waiting time problems
Author/Authors
Eker، نويسنده , , S?tk? and Bozdemir، نويسنده , , Süleyman، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
553
To page
555
Abstract
We propose a simulation model for dielectric relaxation based on defect diffusion. The defect diffusion model (DDM) has been used to interpret dielectric relaxation and other relaxation phenomena. The essential feature of the model is a cooperative interaction between the relaxing dipole and its nearest-neighbors, containing defects, and the relaxation can only occur when a defect encounters a dipole. In our model we have taken the motion of defect as a stochastic process characterized by successive waiting time problem rather than classical random walk motion. We present computer simulation result for a simple dipolar model system and the dipole correlation function obtained from this new model under various physical conditions appears to be in the form of a stretched exponential function.
Keywords
Defects , Monte Carlo simulations , Modeling and simulation , Diffusion and transport , structure
Journal title
Journal of Non-Crystalline Solids
Serial Year
2010
Journal title
Journal of Non-Crystalline Solids
Record number
1382941
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