Temperature effect of a-Si:H pH-ISFET

In this article, the hydrogenated amorphous silicon (a-Si:H) acted as the sensitive membrane of pH-ISFET. The a-Si:H membrane was deposited by plasma-enhanced chemical vapor deposition (PECVD). In our experiment, we use a Keithley 236 Semiconductor Parameter Analyzer to measure the drain-source current (IDS) vs. gate voltage (VG) curve of a-Si:H ISFET over a pH range from 1 to 7 and a temperature range from 25°C to 65°C. According to our experimental results, we can observe that the pH sensitivity of a-Si:H ISFET is proportional to the operating temperature. And then, we can also find that the temperature coefficient of a-Si:H ISFET is proportional to the pH value of buffer solution.