Title of article
Temperature dependence of ferroelectric properties of SBT thin films
Author/Authors
Jimenez، نويسنده , , R. and Alemany، نويسنده , , C. and Calzada، نويسنده , , M.L. and Tejedor، نويسنده , , P. and Mendiola، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
1601
To page
1604
Abstract
Strontium bismuth tantalate (SBT) thin films have been deposited on Pt/TiO2(100)Si substrates by a metal–organic decomposition (MOD) method, using a non-stoichiometric composition. The measured net spontaneous polarization is a consequence of the parallel alignment of 180° domains, as it is confirmed by the random distribution of the pole figures. Measurements of temperature dependence of permitivitty, ε′, and remnant polarization, Pr, show diverse anomalies. The large shift of the temperature TC, is explained by the structure distortion associated with Bi:Sr ratio of the film. A strong decrease of Pr with T is observed that could be related with possible phase transitions, although more information on atomic level is needed to know the mechanisms involved.
Keywords
films , Functional applications , Temperature , Ferroelectric properties , Tantalates
Journal title
Journal of the European Ceramic Society
Serial Year
2001
Journal title
Journal of the European Ceramic Society
Record number
1405311
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