The microstructure of polymer-derived amorphous silicon carbide layers

In order to achieve thin amorphous silicon carbide layers a two-stage process was applied. The deposition of thin layers from liquid chlorovinylsilanes was carried out under argon flow using a spin-coating-system. Afterwards, the samples were pyrolysed in a temperature range between 800 °C and 1200 °C with different hydrogen concentrations in the atmosphere. Additionally, bulk material was pyrolysed in order to characterise structural changes by transition oligomer to a-SiC:H. s work we present studies on the structure of the layers and of bulk material, which were carried out by XRD, MAS NMR and Raman spectroscopy, depending on pyrolysis conditions. Following results were obtained: Both, silicon carbide layers and bulk material, pyrolysed at 800 °C, were amorphous. Increase of the temperature to 1200 °C leads to a partial amorphous-to-crystalline transition forming β-SiC. Moreover, derivations from stoichiometric SiC were observed: Free silicon was found in thin layers, whereas crystallites of graphite were detected in the bulk material. The amount of excess carbon can be influenced by addition of hydrogen to the pyrolysis atmosphere.