Dielectric properties of (Ba0.8Sr0.2)(ZrxTi1−x)O3 thin films grown by pulsed-laser deposition

Thin films of (Ba0.8Sr0.2)(ZrxTi1−x)O3 (x = 0, 0.08, 0.18, 0.36) were grown on Pt/TiO2/SiO2/Si substrate at temperature of 550 °C by pulsed-laser deposition. XRD patterns show that the thin films are well crystallized into perovskite structure. Electric properties of the thin films, including the dielectric constant, dielectric loss, tunability, polarization loops, and leakage current, were investigated. With an increasing of Zr content, the tunability of dielectric constant and ferroelectric polarization of the thin films decrease and the ferroelectricity disappears. Significantly, it is found that the dielectric loss and leakage current of thin films are reduced by the substitution of Ti with Zr. Furthermore, the leakage current is decreased about three-order of magnitude for an electric field of 100 kV/cm with increasing of Zr content.