Influence of individual thermal shock parameters on stress generated in silicon nitride and its prediction

Influence of repeated thermal shock on the stress generated in silicon nitride, was determined by a new testing method. This method allows verification of temperature and stress progress obtained from a computer simulation. Input parameters were temperature, temperature difference, heating and cooling time. Output parameters were the mean stress and stress peaks of specific cycles. Two methods were used to compare the influence—a newly defined parameter of influence (PI) and a least square method. The results show a dominant influence of the temperature values, which is higher than the influence of temperature difference. The least squares method was also used to predict the value of stress, with coefficient of determination higher than 0.95.