Injection and selfconsistent charge transport in bulk insulators

The new flight-drift model (FDM) of selfconsistent electron transport and electrical charge storage in wide-gap insulators reflects a more realistic simulation of these processes in dielectric and insulating materials than the former mainly ballistic model. Thus, electron-hole creation, their ballistic flight, followed by field-drift transport, and finally trapping in localized states and/or recombination are taken into account. The experimentally accessable quantities of field assisted secondary electron emission σ as well as the resulting surface potential V 0 due to internal current j ( x , t ) , charge ρ ( x , t ) , field F ( x , t ) , and potential V ( x , t ) distributions are obtained. The calculations are performed for bulk Al2O3 ceramics with open and metal-coated and grounded surfaces.