Influence of deposited metal structures on the failure mechanisms of silicon-based components

Miniaturised silicon-based multilayer chips are nowadays widespread as semiconductor components for the mobile device technology. The use of special processing and integration procedures requires such materials to possess a definite mechanical strength to ensure the functionality of the entire device. The strength and mechanical reliability of such components can be described by the Weibull theory, and is highly influenced by the geometry of the metallisation and other near-surface functional layers. In this work, we attempt to clarify the mechanisms leading to the failure of the metallised side of Si-chip components. The combined use of Finite Elements (FE) and Focused Ion Beam (FIB) analyses allowed recognising that cracks are induced in the metal-oxide-silicon interfacial area well before complete failure of the component. Such cracks have a crucial role in the lower strength and higher Weibull modulus observed on the metallised side.