• Title of article

    Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

  • Author/Authors

    Peng، نويسنده , , Ning and Zhang، نويسنده , , Qing and Lee، نويسنده , , Yi Chau and Tan، نويسنده , , Ooi Kiang and Marzari، نويسنده , , Nicola، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    5
  • From page
    191
  • To page
    195
  • Abstract
    Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained.
  • Keywords
    Ammonia , Carbon nanotube , field effect transistor , Gas sensor , Schottky barrier
  • Journal title
    Sensors and Actuators B: Chemical
  • Serial Year
    2008
  • Journal title
    Sensors and Actuators B: Chemical
  • Record number

    1436100