Title of article
Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
Author/Authors
Peng، نويسنده , , Ning and Zhang، نويسنده , , Qing and Lee، نويسنده , , Yi Chau and Tan، نويسنده , , Ooi Kiang and Marzari، نويسنده , , Nicola، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
191
To page
195
Abstract
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained.
Keywords
Ammonia , Carbon nanotube , field effect transistor , Gas sensor , Schottky barrier
Journal title
Sensors and Actuators B: Chemical
Serial Year
2008
Journal title
Sensors and Actuators B: Chemical
Record number
1436100
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